Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

Title
Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories
Authors
Keywords
-
Journal
NANO LETTERS
Volume 11, Issue 11, Pages 4520-4526
Publisher
American Chemical Society (ACS)
Online
2011-10-04
DOI
10.1021/nl202434k

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