Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

出版年份 2011 全文链接

标题

Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

作者

关键词

-

出版物

NANO LETTERS

Volume 11, Issue 11, Pages 4520-4526

出版商

American Chemical Society (ACS)

发表日期

2011-10-04

DOI

10.1021/nl202434k

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