Silicon Nanowire Transistors with a Channel Width of 4 nm Fabricated by Atomic Force Microscope Nanolithography

Published 2008 View Full Article

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Title
Silicon Nanowire Transistors with a Channel Width of 4 nm Fabricated by Atomic Force Microscope Nanolithography
Authors
Keywords
-
Journal
NANO LETTERS
Volume 8, Issue 11, Pages 3636-3639
Publisher
American Chemical Society (ACS)
Online
2008-10-01
DOI
10.1021/nl801599k

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