Silicon Nanowire Transistors with a Channel Width of 4 nm Fabricated by Atomic Force Microscope Nanolithography

出版年份 2008 全文链接

标题

Silicon Nanowire Transistors with a Channel Width of 4 nm Fabricated by Atomic Force Microscope Nanolithography

作者

关键词

-

出版物

NANO LETTERS

Volume 8, Issue 11, Pages 3636-3639

出版商

American Chemical Society (ACS)

发表日期

2008-10-01

DOI

10.1021/nl801599k

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