Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed

Published 2008 View Full Article

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Title
Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed
Authors
Keywords
-
Journal
NANO LETTERS
Volume 8, Issue 3, Pages 925-930
Publisher
American Chemical Society (ACS)
Online
2008-02-06
DOI
10.1021/nl073407b

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