Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed

标题
Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed
作者
关键词
-
出版物
NANO LETTERS
Volume 8, Issue 3, Pages 925-930
出版商
American Chemical Society (ACS)
发表日期
2008-02-06
DOI
10.1021/nl073407b

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