Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

Published 2015 View Full Article

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Title
Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 10, Pages 105037
Publisher
IOP Publishing
Online
2015-09-21
DOI
10.1088/0268-1242/30/10/105037

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