Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

出版年份 2015 全文链接

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作者

关键词

出版物

Volume 30, Issue 10, Pages 105037

出版商

IOP Publishing

发表日期

2015-09-21

DOI

10.1088/0268-1242/30/10/105037

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