Reliability testing of integrated low-temperature PVD PZT films

Reliability and integration of Lead Zirconate Titanate (PZT) is still a strong concern regarding its commercialization. In this work an approach to include reliability on wafer-level for integration and process development is presented. Long-term leakage current development with high statistics of integrated low-temperature PVD PZT capacitors at different temperature, voltage and polarity are discussed. Strong similarities to the behavior of pulsed laser deposition (PLD), sol-gel and ceramic PZT were obtained. It is proposed to use the current evolution after first breakdown as possible indication of remaining useful life. Changes of the Weibull slope above a temperature of 150 degrees C and gradual change over voltage acceleration in the range of 100 kV/cm to 200 kV/cm were found. This indicates that accelerated lifetime testing in the temperature range below 150 degrees C is possible and caution is required for voltage acceleration.