Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation

Published 2014 View Full Article

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Title
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation
Authors
Keywords
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Journal
MICROELECTRONICS RELIABILITY
Volume 54, Issue 12, Pages 2650-2655
Publisher
Elsevier BV
Online
2014-10-15
DOI
10.1016/j.microrel.2014.09.020

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