The influence of ferroelectric–electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors
The influence of ferroelectric–electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search