Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

Published 2011 View Full Article

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Title
Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors
Authors
Keywords
-
Journal
MICROELECTRONICS RELIABILITY
Volume 51, Issue 9-11, Pages 1792-1795
Publisher
Elsevier BV
Online
2011-08-03
DOI
10.1016/j.microrel.2011.07.018

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