Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Published 2011 View Full Article

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Title
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors
Authors
Keywords
-
Journal
MICROELECTRONICS RELIABILITY
Volume 51, Issue 5, Pages 879-884
Publisher
Elsevier BV
Online
2011-01-06
DOI
10.1016/j.microrel.2010.12.007

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