Journal
MICROELECTRONICS RELIABILITY
Volume 51, Issue 9-11, Pages 1540-1543Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2011.06.004
Keywords
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Funding
- Ministry of Science of the Republic of Serbia [0171026, TR32026]
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The effects of static and pulsed NBT stressing on threshold voltage in p-channel power VDMOSFETs are analysed, and the results are compared in terms of the effects on device lifetime. The results obtained by both 1/V-G and 1/T models, which are used for extrapolation to normal operation voltages and temperatures, respectively, indicate the device lifetime could be much longer under the pulsed stress conditions than under the static ones. It is also shown that lifetime tends to increase with decreasing the duty cycle of pulsed stress voltage applied. (C) 2011 Elsevier Ltd. All rights reserved.
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