Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposition (ALD) HfZrLaO high-kappa gate dielectric were fabricated and investigated. The equivalent oxide thickness (EOT) is 0.68 nm and the gate leakage current density (J(g)) is only 9.3 x 10(-1) A/cm(2). The time-dependence dielectric breakdown (TDDB) behavior agrees with the percolation model, and the TDDB characteristics are consistent with the thermochemical E-model for lifetime projection. The experimental results show that the Weibull slopes are almost independent of capacitor area and stress conditions. The field acceleration parameter (gamma) and activation energy (Delta H-0) are determined around 5.9-7.0 cm/MV and 0.54-0.60 eV, respectively. At 85 degrees C, the maximum voltage projected for 10-years TDDB lifetime is 1.87 V. (C) 2010 Elsevier Ltd. All rights reserved.