Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

Void formation and structure chance by heavy ion irradiation Weft: investigated in GaSb and InSb thin films The voids were formed after Irradiation in both materials The average diameter of the voids was about 15 nm in GaSb and 20 urn ill InSb irradiated with 60 keV Sn+ ions to a fluence of 0 25 x 10(18) ions/m(2) at room temperature The void size in InSb is larger than that in GaSb The large void size is quantitatively explained by the amount of Induced vacancies obtained by the SRIM code simulation The Debye-Scherrer rings wet c observed in the SAED patterns on both materials The structure changes into a polycrystal by ion irradiation Additionally, the 200 superlattice reflections in the [001] net pattern were almost absent. and the streak pattern along the < 110 > direction was observed in InSb It is considered that the anti phase domains of different lengths are formed by ion irradiation ion irradiation transforms the structure of InSb from chemical ordering to chemical disordering via the formation of anti phase boundaries [doi 10.2320/matertrans.M2010037]