pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy

Published 2013 View Full Article

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Title
pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy
Authors
Keywords
-
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 16, Issue 6, Pages 1859-1864
Publisher
Elsevier BV
Online
2013-08-03
DOI
10.1016/j.mssp.2013.07.015

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