pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy

标题
pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy
作者
关键词
-
出版物
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 16, Issue 6, Pages 1859-1864
出版商
Elsevier BV
发表日期
2013-08-03
DOI
10.1016/j.mssp.2013.07.015

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