Journal
MATERIALS LETTERS
Volume 116, Issue -, Pages 412-415Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2013.11.072
Keywords
Graphene oxide; GaN; Laser reduction; N-doping
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education [2013R1A1A2013044]
- Ministry of Science, ICT & Future Planning [2010-0019694]
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Graphene oxide coated on GaN was simultaneously reduced and doped with nitrogen via excimer laser irradiation. Nitrogen dopant was originated from the GaN during the laser-induced dissociation at high energies. This phenomenon was confirmed by the absence of C-N bond formation in laser irradiated graphene oxide on SiO2. A top-gated field-effect transistor based on laser reduction of graphene oxide channel on GaN showed n-type behavior via the gate voltage modulation. The present findings indicate a paradigm for the formation of graphene-nitride semiconductor interfaces. (C) 2013 Elsevier B.V. All rights reserved.
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