Journal
MATERIALS LETTERS
Volume 126, Issue -, Pages 217-219Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2014.04.072
Keywords
Nanocrystalline materials; Chemical vapor deposition; Semiconductors; Electrical properties
Funding
- Pingdingshan Science and Technology Bureau Science Research Programs [2012C039]
- Henan Province Scientific and Technological Department Programs [092102210198, 122102210171]
- Henan Province Scientific and Technological Department Key Programs for Science and Technology Development [102102210439]
- Henan Province Education Department Natural Science Research Programs [2010B150002]
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The p-type 3C-SiC nanowires are synthesized according to a direct vapor-solid reaction adoping a diborane dopant source, and the structure characterizations reveal that the as-synthesized nanowires have a zinc blende structure with a crystal growth direction of [111]. The electrical properties of nano-field-effect transistors demonstrate that the SiC nanowires have p-type conductivity with a mobility (mu(h)) of 4.2 x 10(-2) cm(2) V-1 S-1 and carrier concentration (nh) about 2.98 x 10(19) cm(-3). This significant p-type conductivity is attributed to the B doping, the high-aspect-ratio and nearly perfect single-crystalline quality. The as-synthesized 3C-SiC nanowires are excellent candidates for nanoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.
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