Journal
MATERIALS LETTERS
Volume 98, Issue -, Pages 149-152Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2013.02.032
Keywords
ZnO thin films; Rapid thermal annealing; Grazing incidence x-ray diffraction; Photoluminescence; Electrical properties
Funding
- FEDER through the COMPETE Program
- Portuguese Foundation for Science and Technology (FCT) [PTDC/FIS/098943/2008, PEST-C/FIS/UI607/2011, SFRH/BPD/68489/2010, SFRH/BPD/87215/2012]
- European COST Actions [MP0901-NanoTP, MP0903-NanoAlloy]
- Synchrotron Light Source ANKA [MNT-123]
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A comparative study on the properties of pulsed laser deposited ZnO thin films as a function of rapid thermal annealing temperature (T-a) is presented. Grazing incidence x-ray diffraction pattern reveals that preferred orientation of the films changes from (002) to (103) as T-a varies from 500 to 800 degrees C. A clear correlation between grain morphology and texture formation is noticed. Photoluminescence spectra of all films show a strong near-band-edge ultraviolet (UV) emission and the UV emission intensity increases with T-a. Simultaneously, a weak and broad green emission centered at 505 nm corresponds to oxygen vacancies also emerged in the films annealed at T-a >= 600 degrees C. A significant hysteresis behavior is observed in current-voltage characteristics and attributed to trapping/de-trapping driven effect. It is shown that high resistance state is dominated by space charge limited currents and low resistance state is governed by both Pool-Frenkel (2-5 V) and Schottky emission (0-2 V). (C) 2013 Elsevier B.V. All rights reserved.
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