Journal
MATERIALS LETTERS
Volume 106, Issue -, Pages 352-355Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2013.05.062
Keywords
Nano-crystalline materials; Semiconductors; Physical Vapor Deposition
Funding
- WCU (World Class University) through the National Research Foundation of Korea
- Ministry of Education, Science and Technology [R32-20031]
- University Grant Commission, Government of India
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012-K1A3A1A19-038371]
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The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg3N2 powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire. (C) 2013 Elsevier B.V. All rights reserved.
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