Journal
MATERIALS LETTERS
Volume 64, Issue 19, Pages 2112-2114Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2010.06.056
Keywords
Doping; MOCVD; Oxides; Semiconducting II-VI materials
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One dimensional nitrogen-doped ZnO nanowires were deposited on C-plane sapphire using metal organic chemical vapour deposition. Nanowires have been characterized by scanning electron microscopy, transmission electron microscopy, micro-Raman scattering and micro-photoluminescence spectroscopy. The structural analysis has shown a high crystalline quality. In N-doped ZnO nanowires nitrogen incorporation was emphasized by Raman spectral analysis and reduction of nitrogen concentration along the wire, from the bottom to the top was found by local analysis. Low temperature micro-photoluminescence spectra exhibit donor-acceptor pair transitions. (C) 2010 Elsevier B.V. All rights reserved.
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