4.6 Article

Coaxial p-Si/n-ZnO nanowire heterostructures for energy and sensing applications

Journal

MATERIALS CHEMISTRY AND PHYSICS
Volume 135, Issue 2-3, Pages 618-622

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2012.05.034

Keywords

Metal oxide; Silicon; Nanowire; Core-shell; Device; Sensor

Funding

  1. University of Cologne
  2. Framework 7 program under the project S3 [FP7-NMP-2009-247768]
  3. BMBF [FKZ 03X5512]
  4. IREC
  5. XaRMAE Network of Excellence on Materials for Energy of the Generalitat de Catalunya
  6. DAAD
  7. German-Egyptian long term scholarship (GERLS) [A/09/92414]

Ask authors/readers for more resources

Radial p-n nanowire heterojunction devices represent a favorable geometry to maximize the interfacial area and charge carrier separation due to the built-in field established across the junction. This report presents the functional characterization of a heterojunction device based on a single coaxial p-Si/n-ZnO nanowire that was integrated in a circuit by FIB nanolithography to study the electrical properties. Specifically, their photovoltaic and gas sensing performances were preliminary assessed. The gas sensing response of the p-n heterojunction could be usefully modulated by controlling the bias currents through the device, showing a complementary functionality of these nanoarchitectured devices. (C) 2012 Elsevier B.V. All rights reserved.

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