Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

Title
Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system
Authors
Keywords
Interface state density, Metal-oxide-semiconductor devices, Vapor cooling condensation system, ZnO-based metal-oxide-semiconductor field-effect transistors
Journal
APPLIED SURFACE SCIENCE
Volume 354, Issue -, Pages 71-73
Publisher
Elsevier BV
Online
2015-01-03
DOI
10.1016/j.apsusc.2014.12.179

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