Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

出版年份 2015 全文链接

标题

作者

关键词

Interface state density, Metal-oxide-semiconductor devices, Vapor cooling condensation system, ZnO-based metal-oxide-semiconductor field-effect transistors

出版物

APPLIED SURFACE SCIENCE

Volume 354, Issue -, Pages 71-73

出版商

Elsevier BV

发表日期

2015-01-03

DOI

10.1016/j.apsusc.2014.12.179

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