Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring

出版年份 2015 全文链接

标题

作者

关键词

In vacuo XPS, Atomic layer deposition, Ta, 2, O, 5, ReRAM, Interface engineering

出版物

Volume 356, Issue -, Pages 454-459

出版商

Elsevier BV

发表日期

2015-08-07

DOI

10.1016/j.apsusc.2015.07.217

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