Article
Chemistry, Physical
Hanieh Farkhondeh, Fatemeh R. Rahsepar, Lei Zhang, Kam Tong Leung
Summary: The study investigates the growth of methionine nanofilms on a metal silicide surface at room and lower temperatures, forming extended one-dimensional molecular wires with zwitterionic intermolecular interactions. Surface defects and terrace sites play a crucial role in the initiation and directed growth of adsorption structures, leading to self-organized nanostructures such as nanowires and nanogratings. Density functional theory calculations provide insights into the adsorption configurations of individual molecular species on the surface and highlight the importance of molecule-molecule and molecule-substrate interactions in the differences between methionine adsorption on bare Si and silver silicide surfaces.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Nanoscience & Nanotechnology
Andrea Picone, Marco Finazzi, Lamberto Duo, Dario Giannotti, Franco Ciccacci, Alberto Brambilla
Summary: This experimental study investigates the interplay between the structural details and electronic properties of the C-60/Ni(111) interface, revealing the stabilization of two different phases and the adsorption geometry of the molecules. The results show that the electronic properties of C-60/Ni(111) are strongly influenced by the morphology of the interface, suggesting the potential for tuning the electronic properties of organic/inorganic heterostructures by adjusting the structural coupling with the substrate.
ACS APPLIED NANO MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Iskender Muz
Summary: The adsorption of fluoroquinolone (FQ) on Mg-, Ca-, Fe- and Zn-doped fullerenes was investigated using density functional theory (DFT) for the first time. The results showed that the substitution or doping of Mg, Ca, Fe, and Zn atoms on C60 enhanced the reactivity and sensitivity of the fullerenes towards FQ. Particularly, Ca-doped fullerene exhibited the highest adsorption energy and increased electrical conductivity, making it a potential candidate for nano biosensor applications.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Nikita Siminel, Konstantin N. Galkin, Ernest Arushanov, Nikolay G. Galkin
Summary: This study firstly observed the photoconductivity in epitaxial Ca2Si film and determined several thermodynamic parameters and the nature of the fundamental transition.
Article
Chemistry, Multidisciplinary
Takuhiro Kakiuchi, Tomoki Matoba, Daisuke Koyama, Yuki Yamamoto, Akitaka Yoshigoe
Summary: The oxidation mechanism of hafnium overlayers on an Si(111) substrate was investigated, showing that metallic hafnium and interfacial HfSi were oxidized via different pathways.
Article
Chemistry, Physical
ShiQuan Wu, Limin Lu, Li Li, Qiqi Liang, Huaxu Gao, XianHao Zhao, DeYuan Hu, TianYu Tang, YanLin Tang
Summary: The study found that doping atoms can improve the drug delivery performance of C60, making it easier to release the drug. In addition, titanium-doped fullerenes are considered more suitable as carriers for 6MP.
CHEMICAL PHYSICS LETTERS
(2022)
Article
Physics, Applied
Pingru Wu, Xingen Liu, Qifeng Liang, Zhun Liu
Summary: Research on the effect of graphene-coated substrates on regulating the commensurate epitaxial growth of ionic thin-films has shown significant impact. Recent studies have also explored the possibility of obtaining covalent-bonded stanene films through remote heteroepitaxy on monolayer graphene-covered Cu substrates. First-principles calculations were used to uncover the microscopic mechanisms behind these unusual remote interactions and the role of MLG in adatom growth.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Optics
V. Quintero Riascos, M. Tacca, R. Vidal, C. Gonzalez, E. C. Goldberg, F. Bonetto
Summary: The final charge states of H+ ions colliding with a C-60 monolayer on Cu(111) were analyzed both experimentally and theoretically. Experimental results showed the influence of the substrate on the final charge state, with positive and negative ions contributing nearly evenly to the total scattered charged particles. Theoretical analysis suggested that trajectories involving ion penetration and multiple scattering events are particularly relevant for the projectile-target charge exchange process studied.
Article
Chemistry, Physical
Sergey A. Kukushkin, Andrey V. Osipov
Summary: Thin films of single-crystal silicon carbide grown on silicon substrate via a chemical reaction with carbon monoxide gas were studied using spectral ellipsometry in the photon energy range of 0.5-9.3 eV. An intermediate layer with semimetal properties was found to form at the interface between 3C-SiC(111) and Si(111), and quantum chemistry methods were used to calculate the properties of this interface. Silicon atoms from the substrate were shown to be attracted to the interface on the side of the silicon carbide film, resulting in semimetal properties corresponding to the ellipsometry data.
Article
Crystallography
Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Hongwei Gao, Meixin Feng, Yu Zhou, Hui Yang
Summary: We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN on stripe-patterned Si(111) substrates with various trench widths. By narrowing down the trench and ridge widths of patterned Si substrates, crack-free, 6-micrometer-thick, high-quality AlN films on Si substrates were produced. This work paves the way for the fabrication of high-performance Al(Ga)N-based thin-film devices on Si.
Article
Chemistry, Physical
V. V. Mararov, T. Utas, L. Bondarenko, A. Y. Tupchaya, Y. E. Vekovshinin, D. Gruznev, A. N. Mihalyuk, A. Zotov, A. A. Saranin
Summary: The self-assembled growth of C60 monomolecular layers on the atomic sandwich structure of Tl-covered single-layer NiSi2 on Si(111) is influenced by the density of the Tl atomic layer. Different configurations of C60 fullerene arrays, reflected in their brightness levels, can be achieved through Tl deposition, allowing for the fabrication of homogeneous C60 layers with exclusively normal or bright fullerenes.
Article
Chemistry, Physical
E. Barrena, R. Palacios-Rivera, A. Babuji, L. Schio, M. Tormen, L. Floreano, C. Ocal
Summary: Research shows that the fluorine content of initial C60F48 deposited on Ag(111) surface at room temperature varies with molecular coverage, with evidence of de-fluorination and transformation into C60 at low molecular coverage. Silver fluoride formation is also observed. The process involves both molecules and the metal surface, with de-fluorination stopping before complete coverage of the substrate surface by fullerenes.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2022)
Article
Physics, Multidisciplinary
Sebastian Wolf, Domenico Di Sante, Tilman Schwemmer, Ronny Thomale, Stephan Rachel
Summary: The deposition of atomic layers on semiconductor substrates provides a platform for studying the extended electronic Hubbard model, leading to the onset of superconductivity in certain systems. By investigating the nature of superconducting instability in hole-doped Sn/Si(111), it was found that the extended Hubbard interactions are crucial for yielding triplet pairing, with different pairing types depending on the level of hole doping. This finding offers new ways for engineering unconventional triplet superconductivity in electronic materials.
PHYSICAL REVIEW LETTERS
(2022)
Article
Physics, Multidisciplinary
S. Lu, K. Peng, P. D. Wang, A. X. Chen, W. Ren, X. W. Fang, Y. Wu, Z. Y. Li, H. F. Li, F. Y. Cheng, K. L. Xiong, J. Y. Yang, J. Z. Wang, S. A. Ding, Y. P. Jiang, L. Wang, Q. Li, F. S. Li, L. F. Chi
Summary: Monolayer hexagonal MnTe2, synthesized using molecular beam epitaxy under Te rich condition, is found to be a semiconductor with a large bandgap of around 2.78 eV. The valence state of Mn4+ and the atom ratio of ([Te]:[Mn]) confirm the MnTe2 compound.
Article
Materials Science, Multidisciplinary
Kanghui Wang, Min Zhang, Tixian Zeng, Fan He, Wei Wen
Summary: InSb films were deposited on Si (111) substrate using CdTe buffer layers, which significantly improved the crystal structure, morphology, optical, and electrical properties of the films. The CdTe buffer layer reduced stress and improved the grain size of InSb films, while also controlling the appearance of dislocations at the interface. The insertion of a CdTe buffer layer also affected the surface roughness and carrier mobility of InSb films, making it an effective method to enhance the performance of InSb films.