Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells
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Title
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells
Authors
Keywords
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Journal
PROGRESS IN PHOTOVOLTAICS
Volume 24, Issue 4, Pages 533-542
Publisher
Wiley
Online
2015-01-20
DOI
10.1002/pip.2585
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- (2009) Wolfgang Guter et al. APPLIED PHYSICS LETTERS
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