HfxZr1−xO2 compositional control using co-injection atomic layer deposition

Evaluation of high thermal stability cyclopentadienyl Hf precursors with H2O as a co-reactant for advanced gate logic applications

(2011) Steven Consiglio et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Gate Oxides Beyond SiO2

(2011) Darrell G. Schlom et al.   MRS BULLETIN

Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O

(2010) X. Shi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition

(2009) J. Müller et al.   MICROELECTRONIC ENGINEERING

Observation of Reliability of HfZrOXGate Dielectric Devices with Different Zr/Hf Ratios

(2008) Jing-Chyi Liao et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Physical and Electrical Properties of Hafnium–Zirconium–Oxide Films Grown by Atomic Layer Deposition

(2008) Seokhwan Bang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Physical and Electrical Properties of Atomic-Layer-Deposited Hf[sub x]Zr[sub 1−x]O[sub 2] with TEMAHf, TEMAZr, and Ozone

(2007) D. H. Triyoso et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY