Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

(2015) Pil Sung Park et al.   IEEE ELECTRON DEVICE LETTERS

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

(2015) Yan Tang et al.   IEEE ELECTRON DEVICE LETTERS

High-field quasi-ballistic transport in AlGaN/GaN heterostructures

(2014) B. A. Danilchenko et al.   APPLIED PHYSICS LETTERS

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

(2012) Tian Fang et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

(2010) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS