Journal
NANOSCALE
Volume 5, Issue 12, Pages 5283-5287Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr00387f
Keywords
-
Categories
Funding
- Natural Sciences and Engineering Research Council of Canada
- McGill University
Ask authors/readers for more resources
The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available