Semiconductor–Metal Transition and Band-Gap Tuning in Quasi-Free-Standing Epitaxial Bilayer Graphene on SiC

Published 2011 View Full Article

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Title
Semiconductor–Metal Transition and Band-Gap Tuning in Quasi-Free-Standing Epitaxial Bilayer Graphene on SiC
Authors
Keywords
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Journal
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
Volume 80, Issue 2, Pages 024705
Publisher
Physical Society of Japan
Online
2011-02-10
DOI
10.1143/jpsj.80.024705

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