Semiconductor–Metal Transition and Band-Gap Tuning in Quasi-Free-Standing Epitaxial Bilayer Graphene on SiC

标题
Semiconductor–Metal Transition and Band-Gap Tuning in Quasi-Free-Standing Epitaxial Bilayer Graphene on SiC
作者
关键词
-
出版物
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
Volume 80, Issue 2, Pages 024705
出版商
Physical Society of Japan
发表日期
2011-02-10
DOI
10.1143/jpsj.80.024705

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