Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric

标题
Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
作者
关键词
-
出版物
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 54, Issue 2, Pages 707-711
出版商
Korean Physical Society
发表日期
2009-06-24
DOI
10.3938/jkps.54.707

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search