Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 33, Issue 2, Pages 277-285Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2012.09.015
Keywords
Interface; Thermal resistance; Direct bonding; Microstructure
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Funding
- National Science Council of Taiwan [NSC100-3113-E-002-001]
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The thermal conductivity of Cu/Al2O3 bilayers prepared by a direct-bonding technique was determined. The direct-bonding process started with the pre-oxidation treatment of a Cu plate at a temperature less than 600 degrees C. Though a thin oxide layer was located on the surface of the plate after treatment, the oxygen solutes began to diffuse into the interior of Cu plate prior to bonding. Bonding occurred by a eutectic liquid formed at 1075 degrees C. No reaction interphase was observed at the Cu-Al2O3 interface. The thermal resistance of the Cu/Al2O3 interface is very low. The extremely low thermal resistance can be related to the clean interface between the two materials. (C) 2012 Elsevier Ltd. All rights reserved.
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