Effects of Carrier Concentration in the Back and Front Channels of Hf-In-Zn-O Thin Film Transistors

Photo and thermal stability enhancement of amorphous Hf–In–Zn–O thin-film transistors by the modulation of back channel composition

(2011) W. J. Maeng et al.   APPLIED PHYSICS LETTERS

The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination

(2011) Hyun-Suk Kim et al.   IEEE ELECTRON DEVICE LETTERS

The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf–In–Zn–O TFTs

(2011) W. J. Maeng et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Hf incorporation in solution-processed Hf-InZnO TFTs

(2011) Woong Hee Jeong et al.   THIN SOLID FILMS

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

(2010) Sang-Yun Sung et al.   APPLIED PHYSICS LETTERS

Local structure and conduction mechanism in amorphous In–Ga–Zn–O films

(2009) Deok-Yong Cho et al.   APPLIED PHYSICS LETTERS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

(2009) Toshio Kamiya et al.   Journal of Display Technology

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Control of threshold voltage in ZnO-based oxide thin film transistors

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs

(2008) P. Barquinha et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current

(2008) Kyoung-Seok Son et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation

(2008) W. J. Maeng et al.   JOURNAL OF APPLIED PHYSICS