Effect of Y, Gd, Dy, and Ce Doping on the Microstructural and Electrical Properties of Sol-Gel-Deposited ZrO2 Film

Gate Oxides Beyond SiO2

(2011) Darrell G. Schlom et al.   MRS BULLETIN

Characteristics of Ce-Doped ZrO[sub 2] Dielectric Films Prepared by a Solution Deposition Process

(2010) Myung Soo Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A first-principles study of enhanced dielectric responses in Ti and Ce doped HfO2

(2009) Gargi Dutta   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

(2008) Jaakko Niinistö et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Maximizing performance for higher K gate dielectrics

(2008) John Robertson   JOURNAL OF APPLIED PHYSICS

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B