The Growth of GaN Nanorods with Different Temperature by Molecular Beam Epitaxy

Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires

(2009) K. Jeganathan et al.   JOURNAL OF APPLIED PHYSICS

Coaxial Group III−Nitride Nanowire Photovoltaics

(2009) Yajie Dong et al.   NANO LETTERS

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

(2009) O Landré et al.   NANOTECHNOLOGY

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

(2009) M Willander et al.   NANOTECHNOLOGY

Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy

(2008) Shunsuke Ishizawa et al.   Applied Physics Express

Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy

(2008) Young S Park et al.   NANOTECHNOLOGY

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small