Article
Materials Science, Coatings & Films
Shuo Huang, Prem Panneerchelvam, Chad M. Huard, Shyam Sridhar, Peter L. G. Ventzek, Mark D. Smith
Summary: This paper presents a computational patterning software called ProETCH (R) which models the etch patterning process with rigorous physics and advanced algorithms. The software is calibrated using experimental data and used to identify different fundamental pathways in observed profile metrics. It is also used for process development and optimization by solving the forward and inverse problems.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Automation & Control Systems
Lifei Zhang, Lile Xie, Xinchun Lu
Summary: In this study, the effects of various non-ionic surfactants and different pH levels in CeO2-based slurries on the polishing performance of STI CMP process were investigated. Two surfactants, PVP-K30 and polyethylene glycol, were selected through sedimentation experiments for their better dispersion of CeO2 slurry. Polishing experiments and AFM characterization tests showed that the selected surfactants had significant effects on the polishing performance at different pH conditions. Surface adsorption tests, thermogravimetry experiments, zeta potential measurements, and chemical valence bond structure analysis were conducted to explain the underlying mechanism of surfactants on SiO2 and Si3N4 wafers. The addition of non-ionic surfactant PVP-K30 was found to improve the performance of ceria slurries used in STI CMP process.
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
(2023)
Article
Engineering, Multidisciplinary
Lifei Zhang, Lile Xie, Xinchun Lu
Summary: As technology develops, the chemical mechanical polishing (CMP) slurries for shallow trench isolation (STI) at the 7 nm node are unable to fully meet the technical requirements. This study focuses on studying the STI CMP process by introducing various ionic surfactants in ceria slurries to control removal rates, selectivity, and surface qualities. The addition of piperazine and 2-methylpiperazine surfactants was found to reduce the number and depth of scratches on the surfaces of SiO2 and Si3N4 after polishing.
COGENT ENGINEERING
(2023)
Article
Engineering, Electrical & Electronic
Yu Fu, Te Bi, Yuhao Chang, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada
Summary: In this study, excellent electrical performances were achieved for diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) using chemical-vapor-deposition grown SiO2 as the filling insulator. The surfaces of the SiO2 films were treated with oxygen plasma to remove the carbon-rich layer. The devices exhibited high on-off ratios and subthreshold slopes at elevated temperatures, indicating potential applications in industrial settings.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Environmental
Xuehan Wang, Jiapeng Chen, Zhengzheng Bu, Hanqiang Wang, Wenjun Wang, Weimin Li, Tao Sun
Summary: By preparing Fe3O4 nanocatalysts, the Fenton system has been successfully applied to SiC polishing, significantly improving the material removal rate. UV-vis spectroscopy curves indicate that more radicals are produced at pH 2.5 in an alkaline silica slurry, but better polishing results are achieved at pH 9.0 for SiC.
JOURNAL OF ENVIRONMENTAL CHEMICAL ENGINEERING
(2021)
Article
Chemistry, Multidisciplinary
Katherine M. Wortman-Otto, Don Watson, Don Dussault, Jason J. Keleher
Summary: Due to the miniaturization of semiconductor devices, the slurry formulations used in the CMP process have become more complex. This study evaluates the CMP performance under different shear stress conditions using soft cleaning chemistries and megasonic action.
Article
Engineering, Manufacturing
Xiangxiang Cui, Zhenyu Zhang, Jianjun Yang, Zheng Ren, Hongxiu Zhou, Chunjing Shi, Fanning Meng, Junyuan Feng, Shuming Zhao
Summary: Due to its soft-brittle, deliquescent, and temperature-sensitive nature, potassium dihydrogen phosphate (KDP) is difficult to process. However, high-performance devices require a surface roughness of less than 1 nm on KDP, posing a significant challenge. To overcome this challenge, four types of green slurries were developed for the chemical mechanical polishing (CMP) of KDP. After using the glycol slurry with a scanning area of 50 x 50 μm2, the surface roughness Sa was measured to be 0.562 nm.
JOURNAL OF MANUFACTURING PROCESSES
(2023)
Article
Chemistry, Multidisciplinary
Yongxiu Li, Xueliang Wang, Linmin Ding, Yao Li, Rucheng He, Jing Li
Summary: In this study, CeO2 octahedrons with different microstructures and surface characteristics were prepared by calcining a precursor material and the effect of calcination temperature on their microstructure and polishing performance was investigated.
Article
Materials Science, Multidisciplinary
Abigail N. Linhart, Katherine M. Wortman-Otto, Jason J. Keleher
Summary: As technology advances beyond Moore's Law, the need to alter CMP processes to meet consumer demands becomes critical. To achieve higher oxide material removal rates, slurry formulations have become more complex by implementing rate enhancing additives to increase the slurry's chemical activity.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Materials Science, Coatings & Films
Miyako Matsui, Tatehito Usui, Kenichi Kuwahara
Summary: The study investigated highly selective SiCN etching using NF3/Ar-based gas plasma generated by microwave electron-cyclotron resonance for fabricating 3D devices. Adding oxygen to the NF3/Ar etching plasma enabled highly selective etching of SiCN to poly-Si, while using SiCl4 in the plasma achieved selective etching of SiCN to SiO2 and Si3N4. Additionally, utilizing hydrogen-added plasma allowed for highly selective etching over TiN by forming a protective layer containing TiNxFy and ammonium fluoride on the TiN surface.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Materials Science, Multidisciplinary
Ju Hyeon Jung, Hongjun Oh, Bonggeun Shong
Summary: As semiconductor devices shrink in size, understanding the fabrication processes at the molecular level is becoming more important. This study used computational chemistry methods to investigate the fluorination reactions of TiN, TiO2, and SiO2, and compared their surface reactivity for etching processes. The results showed that HF can etch these materials, producing TiF4 and SiF4 as byproducts. While the etching of TiO2 and SiO2 was suggested to be favorable, the reaction of TiN was thermodynamically hindered. This study provides theoretical insights into the fluorination reactivity of TiN and explores the etching selectivity between different materials, which is crucial for the ALE process conditions of TiN.
Article
Chemistry, Physical
Soyong Park, Hyunwook Jung, Kyung-Ah Min, Junyeop Kim, Byungchan Han
Summary: This study elucidates the excellent etching selectivity of phosphoric acid towards silicon nitride over silicon dioxide surfaces at high concentration and temperature, pointing out that pyrophosphoric acid is more reactive than orthophosphoric acid. Water molecules are found to assist the etching process through catalysis and hydrolysis mechanisms.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Chemical
Motoyuki Iijima, Kenta Hasegawa, Junichi Tatami
Summary: The study introduced a novel gel casting system using nonaqueous, multicomponent, and concentrated slurries for manufacturing Si3N4 dense ceramics. The process involved key components such as PEI-OA and MAs, affecting the solidification of the slurry. By adjusting processing parameters, successful gel casting and densification of complex structured ceramics were achieved.
ADVANCED POWDER TECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Lingting Ye, Zhibo Shang, Kui Xie
Summary: This study demonstrates a novel method for the selective conversion of methane to ethylene in a solid oxide electrolyser with high selectivity and stability, showing promising potential applications in the chemical field.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2022)
Article
Engineering, Electrical & Electronic
Zhengzheng Bu, Fengli Niu, Jiapeng Chen, Zhenlin Jiang, Wenjun Wang, Xuehan Wang, Hanqiang Wang, Zefang Zhang, Yongwei Zhu, Tao Sun
Summary: A novel method of abrasive-free polishing of single crystal silicon was proposed and explored. By using a polishing pad pretreated with colloidal silica, the processing efficiency, stability and quality of single crystal silicon wafers were improved in abrasive-free slurries containing potassium carbonate, potassium silicate or potassium hydroxide.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)