Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 59, Issue 6, Pages 3077-3080Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2012.2224371
Keywords
Displacement damage; gallium nitride; high electron mobility transistors; proton irradiation
Funding
- Office of Naval Resarch
- Air Force Office of Scientific Research
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We present the results of a radiation damage experiment on AlxGa1-xN/GaN high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron gas that causes scattered carriers to be reinjected.
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