Article
Physics, Applied
A. Bader, F. Rothmayr, N. Khan, F. Jabeen, J. Koeth, S. Hoefling, F. Hartmann
Summary: This study presents an interband cascade infrared photodetector based on Ga-free type-II superlattice absorbers, achieving photovoltaic operation. Seven negative-differential-conductance (NDC) regions are observed at elevated temperatures, and the device shows high responsivity peaks under laser illumination.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Pui Q. Yang
Summary: A unified model of shot and Johnson noises is developed for ICIPs, helping to address the confusion between the two noise sources in evaluating detectivities. General yet concise expressions are derived for evaluating the noise characteristics and detectivity of ICIPs, as well as the signal current and photon noise. These derivations contribute to a better understanding of the noise characteristics in ICIPs and other photodetectors.
APPLIED PHYSICS LETTERS
(2022)
Article
Optics
Chadwick L. Canedy, William W. Bewley, Stephanie Tomasulo, Chul Soo Kim, Charles D. Merritt, Igor Vurgaftman, Jerry R. Meyer, Mijin Kim, Thomas J. Rotter, Ganesh Balakrishnan, Terry D. Golding
Summary: The study demonstrates the high-quality growth of interband cascade light emitting devices (ICLEDs) on silicon substrates, showing good performance and manufacturing advantages. Despite some leakage current issues with the silicon devices, the efficiency at high continuous wave current remains at 75% of devices grown on GaSb.
Article
Nanoscience & Nanotechnology
Xuliang Chai, Roger Guzman, Yi Zhou, Zhicheng Xu, Zhaoming Liang, Yihong Zhu, Wu Zhou, Jianxin Chen
Summary: The study investigated the interface atom intermixing in ICIP and its impact on energy band structure, determining alloy composition profiles using STEM and X-ray diffraction techniques. Recalculating energy levels of the layers resulted in improved agreement with measured data, enhancing future ICIP device performance optimization.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Optics
Yu Deng, Zhuo-Fei Fan, Bin-Bin Zhao, Xing-Guang Wang, Shiyuan Zhao, Jiagui Wu, Frederic Grillot, Cheng Wang
Summary: This study reports a fully-developed hyperchaos phenomenon in the mid-infrared regime, generated by interband cascade lasers subjected to external optical feedback. The hyperchaotic optical signal has a broad frequency range and high Lyapunov exponents. Mid-infrared hyperchaos can be valuable for developing long-reach secure optical communication and remote chaotic Lidar systems.
LIGHT-SCIENCE & APPLICATIONS
(2022)
Article
Chemistry, Physical
Krzysztof Ryczko, Agata Zielinska, Grzegorz Sek
Summary: Engineering modification of type II quantum wells significantly broadens the optical gain function in the mid-infrared range, offering the possibility for the development of new generation devices.
Article
Chemistry, Multidisciplinary
Yang Wang, Yue Gu, Ailiang Cui, Qing Li, Ting He, Kun Zhang, Zhen Wang, Ziping Li, Zhenhan Zhang, Peisong Wu, Runzhang Xie, Fang Wang, Peng Wang, Chongxin Shan, Hua Li, Zhenhua Ye, Peng Zhou, Weida Hu
Summary: Uncooled infrared photodetectors have drawn attention for their low cost and compact detection systems, but typically have slow response times. This study explores a van der Waals heterojunction on epitaxial HgCdTe for uncooled mid-wavelength infrared photodetection, achieving fast response times and high detectivity.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Physical
Krzysztof Ryczko, Janusz Andrzejewski, Grzegorz Sek
Summary: In this study, designs of an interband cascade laser (ICL) active region capable of emitting in the mid infrared (MIR) range and grown on an InP substrate are proposed. By theoretically investigating different types of quantum wells made of InGaAs/InAs/GaAsSb with various barriers, the study shows the potential for achieving emission wavelengths from below 3 to at least 4.6 μm, while maintaining high gain compared to state-of-the-art ICLs.
Article
Optics
Hedwig Knoetig, Josephine Nauschuetz, Nikola Opacak, Sven Hoefling, Johannes Koeth, Robert Weih, Benedikt Schwarz
Summary: Through simulation and experimental research, a solution to overcome the performance limitations of interband cascade lasers has been identified, with resonant absorption playing a key role in improving the laser's characteristics. The study paves the way towards high-performance continuous-wave operation at wavelengths above 6 μm.
LASER & PHOTONICS REVIEWS
(2022)
Article
Optics
Pierre Didier, Hedwig Knoetig, Olivier Spitz, Laurent Cerutti, Anna Lardschneider, Elie Awwad, Daniel Diaz-Thomas, A. N. Baranov, Robert Weih, Johannes Koeth, Enedikt Schwarz, Frederic Grillot
Summary: Space-to-ground high-speed transmission is crucial for global broadband network development. The use of mid-infrared wavelengths offers advantages like low atmospheric attenuation and resistance to inclement weather conditions. A proof-of-concept experiment demonstrates a full interband cascade system that achieves high-speed transmission around a wavelength of 4.18 μm.
PHOTONICS RESEARCH
(2023)
Article
Chemistry, Analytical
Jerry R. Meyer, Chul Soo Kim, Mijin Kim, Chadwick L. Canedy, Charles D. Merritt, William W. Bewley, Igor Vurgaftman
Summary: The article discusses the construction of a midwave infrared photonic integrated circuit (PIC) on a GaSb substrate to combine lasers, detectors, passive waveguides, and other optical elements for chemical detection systems. It explores highly compact architectures, including an edge-emitting laser configuration that optimizes stability and potentially operates with lower drive power. The mature processing techniques could eventually enable mass production of hundreds of individual PICs on the same chip for chemical sensing applications.
Article
Optics
Chao Ning, Tian Yu, Shuman Liu, Jinchuan Zhang, Lijun Wang, Junqi Liu, Ning Zhuo, Shenqiang Zhai, Yuan Li, Fengqi Liu
Summary: We demonstrate GaSb-based interband cascade lasers with high output power and good reliability.
CHINESE OPTICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Vinh X. Ho, Yifei Wang, Leslie Howe, Michael P. Cooney, Nguyen Q. Vinh
Summary: The practical realization of optoelectronic devices operating in the mid-infrared region is hindered by barriers such as cryogenic operation and complicated growth processes, prompting the interest in extending the performance of graphene photodetectors into this region. By utilizing photoionization of shallow impurities and over band gap excitation in highly doped Si:B and Si:P substrates, researchers have achieved pure graphene photodetectors operating in a broadband range from deep ultraviolet to mid-infrared, with a photoresponsivity of about 5 A/W under mid-infrared illumination at room temperature. This paves the way for a concept of dual-photogating effect induced by both highly doped Si substrates and nanomaterials/nanostructures on top of graphene field-effect transistors.
ACS APPLIED NANO MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Kevin D. Vallejo, Carlos I. Cabrera-Perdomo, Trent A. Garrett, Madison D. Drake, Baolai Liang, Kevin A. Grossklaus, Paul J. Simmonds
Summary: In this study, we showcase the tailored self-assembled growth of In0.5Ga0.5As quantum dots (QDs) on GaSb(111)A surfaces using molecular beam epitaxy. These QDs demonstrate excellent structural and optical quality through spontaneous Volmer-Weber growth. By utilizing tensile strain, we are able to reduce their band gap energy and achieve light emission in the midwave infrared wavelength range. Furthermore, we observe a blue-shift in emission wavelength with increasing QD size, which we attribute to the incorporation of Sb into the InGaAs QDs from the GaSb barriers. This research holds significant importance as it paves the way for the development of highly tunable mid-infrared light sources.
Review
Chemistry, Multidisciplinary
Rui Cao, Sidi Fan, Peng Yin, Chunyang Ma, Yonghong Zeng, Huide Wang, Karim Khan, Swelm Wageh, Ahmed A. Al-Ghamd, Ayesha Khan Tareen, Abdullah G. Al-Sehemi, Zhe Shi, Jing Xiao, Han Zhang
Summary: This article summarizes the recent progress and potential of 2D materials in mid-infrared optoelectronic devices. The limitations of graphene are mentioned. The authors believe that research on 2D materials beyond graphene will soon emerge and make a positive contribution to the commercialization of nanodevices.
Article
Physics, Applied
T. R. Specht, J. M. Duran, Z. Taghipour, R. Fragasse, R. Tantawy, T. J. Ronningen, G. Ariyawansa, C. Reyner, D. S. Smith, E. Fuller, W. Khalil, S. Krishna
APPLIED PHYSICS LETTERS
(2020)
Article
Physics, Applied
Z. Taghipour, A. W. K. Liu, J. M. Fastenau, D. Lubyshev, S. A. Nelson, S. Krishna
Summary: This paper investigates the monolithic integration of III-V-based optoelectronic devices on Si wafers, focusing on the effect of limiting factors such as dislocations on material properties, and the influence of different substrates on the material performance. The experimental results show variations in carrier lifetimes and recombination mechanisms of the sample under different temperature ranges and optical injection levels. The threading dislocation density in the GaAs sample is significantly higher than that in the Ge/Si substrate sample, and there are distinct differences in recombination mechanisms.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
S. Lee, S. H. Kodati, B. Guo, A. H. Jones, M. Schwartz, M. Winslow, C. H. Grein, T. J. Ronningen, J. C. Campbell, S. Krishna
Summary: The study demonstrated Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes (APDs) with a thick 1000nm multiplication layer, showing low dark current densities and excess noise compared to previously reported APDs. The thick AlGaAsSb-based APDs have the potential to be high-performance multipliers, especially when used with available short-wavelength infrared (SWIR) absorption layers.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
S. H. Kodati, S. Lee, B. Guo, A. H. Jones, M. Schwartz, M. Winslow, N. A. Pfiester, C. H. Grein, T. J. Ronningen, J. C. Campbell, S. Krishna
Summary: The report discusses the gain, noise, and dark current characteristics of Al0.79In0.21As0.74Sb0.26-based APDs on InP substrates and highlights the low excess noise and dark current, as well as the competitive performance compared to other materials. AlInAsSb is proposed as a candidate multiplication layer for avalanche photodiodes in visible to short-wavelength infrared applications.
APPLIED PHYSICS LETTERS
(2021)
Article
Optics
S. C. Lee, S. Krishna, Y-B Jiang, S. R. J. Brueck
Summary: A novel midwave infrared photodetector with plasmonic coupling for enhanced responsivity is reported. The detector features broadband absorption and narrowband SPW enhancement, making it suitable for detecting midwave infrared light.
Article
Engineering, Electrical & Electronic
Roman Fragasse, Ramy Tantawy, Dale Smith, Teressa Specht, Zahra Taghipour, Phillip Hooser, Chris Taylor, Theodore J. Ronningen, Earl Fuller, Charles Reyner, Josh Duran, Gamini Ariyawansa, Sanjay Krishna, Waleed Khalil
Summary: A new imaging pixel unit-cell topology leveraging a photodetector in the forward-bias region is proposed, showing performance benefits compared to a conventional pixel through theoretical analysis and experimentation. The results demonstrate significant improvements in system sensitivity and dynamic range with the new pixel architecture.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2021)
Article
Physics, Applied
S. Lee, B. Guo, S. H. Kodati, H. Jung, M. Schwartz, A. H. Jones, M. Winslow, C. H. Grein, T. J. Ronningen, J. C. Campbell, S. Krishna
Summary: In this study, low noise random alloy (RA) AlGaAsSb avalanche photodiodes (APDs) with nearly lattice-matched InP substrates were demonstrated. The RA AlGaAsSb material, grown at a low temperature, exhibited high quality and low impurity density. The APDs showed low dark current density and excess noise, making them suitable for commercial applications such as optical communication and LiDAR systems.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Sanjay Krishna, Seunghyun Lee, Sri Harsha Kodati, Mariah Schwartz, Hyemin Jung, Theodore J. Ronningen, Bingtian Guo, Andrew H. Jones, Martin Winslow, Joseph C. Campbell, Christoph H. Grein
Summary: This article provides an overview of the progress made in developing LmAPDs on InP substrates using Sb-based multipliers for the SWIR spectral region. The key figures of merit and technical challenges associated with SACM APDs are discussed. Results regarding impact ionization, multiplication gain, dark current, and excess noise of AlGaAsSb and AlInAsSb multipliers are summarized.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Physics, Applied
Seunghyun Lee, Riazul Arefin, Hyemin Jung, Jaedu Ha, Md Saiful Islam Sumon, Jong Su Kim, Sanjay Krishna, Shamsul Arafin
Summary: This experimental study investigates the morphology and optical properties of self-organized quaternary InAlGaAs quantum dots grown on GaAs substrates. Atomic force microscopy (AFM) is used to observe the presence and geometry of the quantum dots, while photoluminescence (PL) spectroscopy is used to verify their optical properties. The temperature-dependent PL measurements reveal a non-monotonic dependence of the peak positions on temperature, unlike conventional quantum well materials. The AFM data and calculated thermal activation energies confirm a bimodal distribution of dot sizes. The rapid decrease in the PL signal at elevated temperatures suggests that thermionic emission and interface defects are the dominant mechanisms of carrier escape and recombination in these quantum dot structures. This study highlights the importance of quaternary quantum dot-based active regions for the development of next-generation diode lasers with shorter emission wavelengths.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
M. Schwartz, S. H. Kodati, S. Lee, H. Jung, D. Chen, C. H. Grein, T. J. Ronningen, J. C. Campbell, S. Krishna
Summary: Background doping polarity is crucial for the performance of optoelectronic devices. The capacitance-voltage (CV) measurements on double mesa structures were used to determine the background polarity of the unintentionally doped intrinsic region. The study found that the capacitance varied with the top mesa diameter, indicating an n-type intrinsic region.
Article
Nanoscience & Nanotechnology
A. M. Arquitola, H. Jung, S. Lee, T. J. Ronningen, S. Krishna
Summary: This study investigates the minority carrier lifetime of InAsSb nBn structures under three conditions: As-Grown, Barrier-Etched, and Passivated blanket barrier-etched, using transient microwave reflectance. Qualitative comparison shows that the minority carrier lifetime decreases for the Barrier-Etched sample compared to the As-Grown sample, indicating sensitivity to changes in the sample surface. Quantitative comparison using a polynomial fit reveals the specific values of parameters A, B, and C for each sample.
Article
Optics
S. Lee, X. Jin, H. Jung, H. Lewis, Y. Liu, B. Guo, S. H. Kodati, M. Schwartz, C. Grein, T. J. Ronningen, J. P. R. David, Joe C. Campbell, S. Krishna
Summary: In this study, a room temperature linear mode APD with high gain, low excess noise factor, and high quantum efficiency at 1550 nm wavelength was demonstrated. The APD on an InP substrate with a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 heterostructure showed significant improvements compared to commercial InGaAs/InP APDs.
Article
Physics, Applied
H. Jung, S. Lee, Y. Liu, X. Jin, J. P. R. David, S. Krishna
Summary: SACM APDs based on GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 structure with a GaAsSb absorber instead of traditional InGaAs absorber require further optimization in reducing tunneling and impact ionization noise in the high electric field region. The tunneling phenomenon is analyzed through current density-voltage measurements, and the impact ionization behavior is evaluated by measuring the multiplication of p-i-n GaAsSb PDs. The findings suggest that the electric field in the absorber can be increased to 175 kV/cm without detrimental ionization effects when designing a SACM APD with a GaAsSb absorber.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Bhupesh Bhardwaj, Urvashi Bothra, Shivam Singh, Sophie Mills, T. J. Ronningen, Sanjay Krishna, Dinesh Kabra
Summary: The study explores the effects of active layer thickness and different interfacial layers on the suppression of leakage current in photodetectors. High-sensitivity perovskite photodetectors with a broadband response and low noise current are fabricated using a specific device structure. Optimal thickness of the active layer and use of a specific electron transport layer further enhance the overall performance of the photodetectors. Comparison with published reports demonstrates the advancements achieved in this study.
APPLIED PHYSICS REVIEWS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Sanjay Krishna
Summary: By growing the multipliers as ternary superlattices, we achieved decreases in excess noise factors and low dark current densities at 300 K.
2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC)
(2021)
