In-Situ Probe of Gate Dielectric-Semiconductor Interfacial Order in Organic Transistors: Origin and Control of Large Performance Sensitivities

Title
In-Situ Probe of Gate Dielectric-Semiconductor Interfacial Order in Organic Transistors: Origin and Control of Large Performance Sensitivities
Authors
Keywords
-
Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 134, Issue 28, Pages 11726-11733
Publisher
American Chemical Society (ACS)
Online
2012-06-19
DOI
10.1021/ja3036493

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started