Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

(2014) S. A. Yan et al.   JOURNAL OF APPLIED PHYSICS

Effect of LaNiO3 buffer layer on dielectric and tunable properties of Pb0.82La0.08Sr0.1Ti0.98O3 thin films on Pt/Ti/SiO2/Si substrates

(2014) Liu Liu et al.   JOURNAL OF CRYSTAL GROWTH

Retention mechanism study of the ferroelectric field effect transistor

(2011) Xiao Pan et al.   APPLIED PHYSICS LETTERS

The Influence of Ultraviolet Irradiation on Polarization Fatigue in Ferroelectric Polymer Films

(2011) Shao Song Fu et al.   IEEE ELECTRON DEVICE LETTERS

Effects of electron irradiation on the ferroelectric 180° in-plane nanostripe domain structure in a thin film prepared from a bulk single crystal of BaTiO3 by focused ion beam

(2011) Takao Matsumoto et al.   JOURNAL OF APPLIED PHYSICS

Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications

(2010) Minghua Tang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of ultraviolet radiation on slow-relaxation processes in ferroelectric capacitance structures

(2010) P. K. Petrov et al.   JOURNAL OF APPLIED PHYSICS

Polarization loss and leakage current reduction in Au/Bi3.15Nd0.85Ti3O12/Pt capacitors induced by electron radiation

(2009) Yushu Li et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

(2009) M. H. Tang et al.   APPLIED PHYSICS LETTERS

Ionizing Radiation Effect on Ferroelectric Nonvolatile Memories and Its Dependence on the Irradiation Temperature

(2009) Mauro Zanata et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE