Article
Physics, Multidisciplinary
Wu Peng, Zhang Tao, Zhang Jin-Cheng, Hao Yue
Summary: Utilizing the excellent properties of GaN, this study focuses on fabricating high-performance AlGaN/GaN Schottky barrier diodes on free-standing GaN substrates to overcome the challenges related to substrate mismatch. The fabricated devices demonstrate low leakage current and turn-on voltage, with potential for use in next-generation power electronics.
ACTA PHYSICA SINICA
(2022)
Article
Materials Science, Multidisciplinary
Genzhuang Li, Yuan Ren, Wang Lin, Qiliang Wang, Liang He, Liuan Li
Summary: A novel quasi-vertical GaN-on-sapphire MPS diode is fabricated by using the p-NiO/n-GaN heterojunction. The MPS diode exhibits a higher turn-on voltage and on-resistance compared to the Ni-anode SBD. The depletion regions at the heterojunction interface effectively enhance the reverse breakdown voltage.
Article
Optics
Jianyang Shi, Zengyi Xu, Wenqing Niu, Dong Li, Xiaoming Wu, Ziwei Li, Junwen Zhang, Chao Shen, Guangxu Wang, Xiaolan Wang, Jianli Zhang, Fengyi Jiang, Shaohua Yu, Nan Chi
Summary: This paper proposes and fabricates a vertical-structure micro-LED-based photodetector on a Si substrate for visible light communication (VLC) in 6G. The photoelectrical performance and communication performance of three different sizes of the photodetector are compared. The experimental results demonstrate that the proposed photodetector can achieve a data rate of over 10 Gbps using specific modulation and pre-equalization algorithms.
PHOTONICS RESEARCH
(2022)
Article
Physics, Multidisciplinary
Da-Ping Liu, Xiao-Bo Li, Tao-Fei Pu, Liu-An Li, Shao-Heng Cheng, Qi-Liang Wang
Summary: Vertical GaN Schottky barrier diodes with TiN anodes exhibit good electrical performance and thermal stability, showing rectifying characteristics under different temperatures. However, low-frequency noise is present due to multiple traps and/or barrier inhomogeneities at the TiN/GaN interface, causing slight capacitance dispersion under reverse voltage.
Article
Physics, Condensed Matter
Tingting Wang, Xiaobo Li, Taofei Pu, Shaoheng Cheng, Liuan Li, Qiliang Wang, Hongdong Li, Jin-Ping Ao
Summary: In this study, a vertical GaN Schottky barrier diode with a bevel junction termination extension was designed using Silvaco TCAD. The bevel junction termination extension effectively reduces on-resistance and suppresses electric field crowding, showing promising performance in achieving high breakdown voltage and low turn-on voltage under optimal parameters.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Engineering, Electrical & Electronic
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Herve Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Fredric Morancho, Yvon Cordier, Dominique Planson
Summary: This paper reports the comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The properties of the GaN active layer were evaluated using various techniques, and the GaN SBDs demonstrated promising performance with near-unity ideality factor, high Schottky barrier height, low leakage current density, and low interface state density.
MICROELECTRONICS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Ying Wang, Taofei Pu, Xiaobo Li, Liuan Li, Jin-Ping Ao
Summary: The study demonstrates that NiO/GaN heterojunction fabricated using p-NiO deposited by magnetron reactive sputtering exhibits good contact properties and thermal stability, leading to enhanced breakdown voltage. Additionally, selectively deposited p-NiO as an edge termination structure can alleviate electric field crowding of Schottky barrier diodes.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Physics, Applied
Yanjun Li, Shu Yang, Fengwei Ji, Xi Tang, Kuang Sheng
Summary: This work investigates the conductivity modulation in vertical GaN-on-GaN PiN diodes under high current densities and its effect on surge current capability. By utilizing the direct-bandgap property of GaN, the junction temperature at different current densities is characterized through photo-luminescence and electro-luminescence measurements. The increase in current density leads to a rise in junction temperature and a shift in emission peaks. The enhanced conductivity modulation due to self-heating improves the ON-resistance, making it desirable for surge current capability. The study also demonstrates the potential of vertical GaN-on-GaN power devices in high electro-thermal-ruggedness applications based on the achieved surge energy density.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Feng Zhou, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Tinggang Zhu, Hai Lu
Summary: A quasi-vertical GaN junction barrier Schottky diode on low-cost sapphire substrate was successfully demonstrated, exhibiting excellent performance attributes such as low reverse leakage, high breakdown voltage, and fast switching capability. Improved heat dissipation techniques enable the diode to achieve high current rectification levels, high power efficiency, and low case temperatures.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Wentao Cai, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, Hiroshi Amano
Summary: The vertical GaN-on-GaN nanowire Schottky barrier diodes (NWSBDs) fabricated using an optimized top-down approach exhibit suppressed reverse leakage current and enhanced breakdown voltage attributed to reduced electric field at the Schottky junction interface. The as-fabricated NWSBD demonstrates a low turn-on voltage, near-unity ideality factor, and a soft breakdown voltage comparable to p-n diodes with similar net doping concentration in the drift region.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Taofei Pu, Hsiang-Chun Wang, Kuang-Po Hsueh, Hsien-Chin Chiu, Xinke Liu
Summary: This paper presents the fabrication of AlGaN/GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates with a Si doped barrier layer. The SBDs with doped barrier layer exhibit lower turn-on voltage, specific on resistance, faster reverse recovery time, and better low-frequency noise characteristics, which make them suitable for high power applications.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Physics, Multidisciplinary
Ji-Yao Du, Xiao-Bo Li, Tao-Fei Pu, Jin-Ping Ao
Summary: The effect of anode area on the temperature sensing ability of a vertical GaN Schottky-barrier-diode sensor was investigated. The current-voltage-temperature characteristics are similar for diodes with different anode areas, except for the series resistance. In the sub-threshold region, the contribution of series resistance can be ignored. The sensitivity is mainly determined by the current density, and a larger anode area enhances the sensitivity at the same current level. However, in the fully turn-on region, the series resistance dominates the sensitivity. A larger anode area can help to decrease the series resistance and improve the sensing ability.
Article
Physics, Multidisciplinary
Qiliang Wang, Tingting Wang, Taofei Pu, Shaoheng Cheng, Xiaobo Li, Liuan Li, Jinping Ao
Summary: In this study, a quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to optimize the on-resistance and breakdown voltage. The use of a SiN dielectric and a field plate structure helps to suppress the electric field crowding effect and reduce the series resistance. The enhanced breakdown voltage is attributed to the charge-coupling effect between the insulation dielectric layer and GaN.
Article
Physics, Condensed Matter
Jiyu Zhou, Liang He, Xiaobo Li, Taofei Pu, Liuan Li, Jin-Ping Ao
Summary: The study found that the length of the p-NiO guard ring has a significant impact on the properties of vertical GaN Schottky barrier diodes, increasing the guard ring length increases the series resistance and decreases the breakdown voltage.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Engineering, Electrical & Electronic
Xiaolu Guo, Yaozong Zhong, Yu Zhou, Shuai Su, Xin Chen, Shumeng Yan, Jianxun Liu, Xiujian Sun, Qian Sun, Hui Yang
Summary: This study presents a novel Nitrogen-implanted guard ring technology for GaN-on-Si Schottky barrier diodes, significantly improving their performance and high-temperature operation capability compared to traditional designs. Through detailed simulations and precise design, the breakdown voltage was enhanced while maintaining excellent characteristics.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
