All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

标题
All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 25, Pages 255104
出版商
IOP Publishing
发表日期
2011-06-10
DOI
10.1088/0022-3727/44/25/255104

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