Journal
JOURNAL OF NANOMATERIALS
Volume 2008, Issue -, Pages -Publisher
HINDAWI LTD
DOI: 10.1155/2008/267161
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Nitrogen-rich titanium nitride (TiN) thin films containing excess nitrogen up to 87.0 at.% were produced on (100) Si substrates via the reactive magnetron DC-sputtering of a commercially available 99.995 at.% pure Ti target within an argon-nitrogen (ArN2) atmosphere with a 20- to-1 gas ratio. The process pressure (PP) and substrate temperature (TS) at which deposition occurred were varied systematically between 0.26 Pa-1.60 Pa and between 15.0. C - 600. C, respectively, and their e. ects on the chemical composition, surface morphology, and preferred orientation were characterized by energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD). The EDS analysis confirms increasing nitrogen content with increasing PP and TS. The SEM images reveal a uniform and crystallized surface morphology as well as a closely packed cross- sectionalmorphology for all crystalline films and a loosely packed cross- sectionalmorphology for amorphous films. Films produced at lower PP and TS have a pyramidal surface morphology which transitions to a columnar and stratified structure as PP and TS increase. The XRD analysis confirms the existence of only the d- TiN phase and the absence of other nitrides, oxides, and/ or sillicides in all cases. It also indicates that at lower PP and TS, the preferred orientation relative to the substrate is along the (111) planes, and that it transitions to a random orientation along the (200), (220), and (311) planes as PP and TS increase and these results correlate with and qualify those observed by SEM. Copyright (c) 2008 E. Penilla and J. Wang.
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