Characterization of Al2O3 thin films fabricated through atomic layer deposition on polymeric substrates

This paper reports on the fabrication of good quality Al2O3 thin films on flexible substrates including polyethylene naphthalate (PEN), polyethylene terephthalate (PET) and Polyamide at different temperatures down to 50 A degrees C under very short water purging steps of 10 s. Al2O3 films with appreciable growth rates having good morphological, chemical, electrical and optical characteristics have been produced. Growth rates of 1.16, 1.14 and 1.15 /cycle have been observed at 50 A degrees C for PET, PEN and polyamide substrates respectively. The surface morphology has been improved with the increase in deposition temperature. Low average arithmetic roughness of 0.88 and 0.78 nm have been recorded for the Al2O3 films deposited at 150 A degrees C on PEN and polyamide respectively. The XPS analysis confirmed the fabrication of Al2O3 films without any carbon contamination and Al 2p, Al 2s and O 1s peaks were appeared at binding energies of 74, 119 and 531 eV, respectively. Excellent insulating properties were observed for the Al2O3 films and optical transmittance of more than 85 % was recorded in the visible region. The experimental results suggest that polymeric materials are excellent candidates to be used as substrates in the fabrication of Al2O3 thin films through atomic layer deposition.