Bilayers of transition metal dichalcogenides: Different stackings and heterostructures
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Bilayers of transition metal dichalcogenides: Different stackings and heterostructures
Authors
Keywords
-
Journal
JOURNAL OF MATERIALS RESEARCH
Volume 29, Issue 03, Pages 373-382
Publisher
Cambridge University Press (CUP)
Online
2013-10-16
DOI
10.1557/jmr.2013.284
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers
- (2013) Ana Laura Elías et al. ACS Nano
- Nb–Nb Interactions Define the Charge Density Wave Structure of 2H-NbSe2
- (2013) Christos D. Malliakas et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
- (2013) Manish Chhowalla et al. Nature Chemistry
- Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
- (2012) Wan Sik Hwang et al. APPLIED PHYSICS LETTERS
- Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach
- (2012) Hong Jiang Journal of Physical Chemistry C
- Electronic structure investigation of MoS2and MoSe2using angle-resolved photoemission spectroscopy andab initioband structure studies
- (2012) S K Mahatha et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- Ambipolar MoS2 Thin Flake Transistors
- (2012) Yijin Zhang et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Valley polarization in MoS2 monolayers by optical pumping
- (2012) Hualing Zeng et al. Nature Nanotechnology
- Control of valley polarization in monolayer MoS2 by optical helicity
- (2012) Kin Fai Mak et al. Nature Nanotechnology
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Gaps and kinks in the electronic structure of the superconductor2H-NbSe2from angle-resolved photoemission at 1 K
- (2012) D. J. Rahn et al. PHYSICAL REVIEW B
- Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
- (2012) Tawinan Cheiwchanchamnangij et al. PHYSICAL REVIEW B
- First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers
- (2011) Yi Ding et al. PHYSICA B-CONDENSED MATTER
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Electronic structure of two-dimensional crystals fromab initiotheory
- (2009) S. Lebègue et al. PHYSICAL REVIEW B
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now