High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature

Title
High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature
Authors
Keywords
Bending stability, flexible polyethylene terephthalate substrate, InGaZnO channel layer, magnetron cosputter system, flexible transparent thin film transistors
Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 3, Pages 780-785
Publisher
Springer Nature
Online
2014-01-02
DOI
10.1007/s11664-013-2957-5

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